Düsseldorf, Germany. Toshiba Electronics Europe GmbH (“Toshiba”) unveiled its N-channel power MOSFET, its first device (TK055U60Z1) in the 600V DTMOSVI series utilizing Toshiba’s super junction structure. The TK055U60Z1 features an RDS(on) of only 55mΩ – a 13% upgrade over comparable components in Toshiba’s established DTMOSIV-H series. The RDS(on) x Qgd is enhanced by 52%.

The TB67S549FTG has a wide operating range for space sensitive applications. 

Toshiba Electronics Europe GmbH released five 1200V silicon carbide (SIC) using its third generation SIC technology to expand on efficient use of energy in high-voltage industrial applications.

Toshiba Electronics Europe GmbH announced the availability of highly accurate G2 SPICE models allowing designers to simulate the performance of their designs before committing to hardware.

Toshiba Electronics Europe GmbH has started mass production of 21 new microcontrollers in the M3H group as new products in the TXZ+ Family Advanced Class, manufactured in a 40nm process.

Improved performance and reduced losses will enhance power supply efficiency

Toshiba Electronics Europe GmbH announced a series of Mikroelektronika Click boards featuring Toshiba bipolar stepper motor drivers to allow for quick and easy device evaluation and prototyping.